SIHF22 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 600V 21A TO220
| Part | Vgs (Max) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Rds On (Max) @ Id, Vgs | FET Type | Supplier Device Package | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 30 V | 600 V | 35 W | 4 V | TO-220-3 Full Pack | 10 V | 86 nC | MOSFET (Metal Oxide) | 180 mOhm | N-Channel | TO-220 Full Pack | Through Hole | -55 °C | 150 °C | 21 A | 1920 pF |