FDPF085N10A Series

N-Channel PowerTrench® MOSFET 100V, 40A, 8.5mΩ

Catalog

N-Channel PowerTrench® MOSFET 100V, 40A, 8.5mΩ

Part	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type
ON Semiconductor FDPF085N10A	33.3 W	N-Channel	100 V	4 V	MOSFET (Metal Oxide)	8.5 mOhm	20 V	40 nC	10 V	-55 °C	175 ░C	TO-220F-3	2695 pF	TO-220-3 Full Pack	Through Hole

Catalog

N-Channel PowerTrench® MOSFET 100V, 40A, 8.5mΩ

Key Features

• RDS(on)= 6.5mΩ( Typ.)@ VGS= 10V, ID= 40A

• Fast Switching Speed

• Low Gate Charge, QG= 31nC ( Typ.)

• High Performance Trench Technology for Extremely Low RDS(on)

• High Power and Current Handling Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.