SIHP33 Series

Catalog

MOSFET N-CH 600V 33A TO220AB

Part	Package / Case	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SIHP33N60EF-GE3	TO-220-3	TO-220AB	MOSFET (Metal Oxide)	600 V	3454 pF	30 V	N-Channel	33 A	Through Hole	4 V	-55 °C	150 °C	155 nC	98 mOhm	10 V	278 W
Vishay General Semiconductor - Diodes Division SIHP33N60E-GE3	TO-220-3	TO-220AB	MOSFET (Metal Oxide)	600 V	3508 pF	30 V	N-Channel	33 A	Through Hole	4 V	-55 °C	150 °C	150 nC	99 mOhm	10 V	278 W