BUK9 Series

Manufacturer: Freescale Semiconductor - NXP

Catalog

TRANS N-CH LFPAK

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
Freescale Semiconductor - NXP BUK9Y3R0-40E/CX
Freescale Semiconductor - NXP BUK9Y41-80E/GFX
Freescale Semiconductor - NXP BUK9Y7R6-40E/GFX
Freescale Semiconductor - NXP BUK9Y59-60E/GFX
Freescale Semiconductor - NXP BUK9Y29-40E/CX
Freescale Semiconductor - NXP BUK9Y12-40E/GFX
Freescale Semiconductor - NXP BUK9E6R1-100E,127	17460 pF	Through Hole	120 A	N-Channel	MOSFET (Metal Oxide)	349 W	-55 °C	175 ░C	5.9 mOhm	10 V	5 V	100 V	133 nC	I2PAK TO-262-3 Long Leads TO-262AA	10 V	I2PAK	2.1 V
Freescale Semiconductor - NXP BUK9E2R3-40E,127	13160 pF	Through Hole	120 A	N-Channel	MOSFET (Metal Oxide)		-55 °C	175 ░C	2.2 mOhm	10 V	5 V	40 V		I2PAK TO-262-3 Long Leads TO-262AA	10 V	I2PAK	2.1 V	87.8 nC
Freescale Semiconductor - NXP BUK9E4R4-80E,127	17130 pF	Through Hole	120 A	N-Channel	MOSFET (Metal Oxide)	349 W	-55 °C	175 ░C		10 V	5 V	80 V		I2PAK TO-262-3 Long Leads TO-262AA	10 V	I2PAK	2.1 V	123 nC	4.2 mOhm
Freescale Semiconductor - NXP BUK9E4R4-40B,127	7124 pF	Through Hole	75 A	N-Channel	MOSFET (Metal Oxide)		-55 °C	175 ░C	4 mOhm			40 V	64 nC	I2PAK TO-262-3 Long Leads TO-262AA	15 V	I2PAK	2 V			254 W	4.5 V 10 V