FDD3682_F085 Series

PowerTrench® MOSFET, N-Channel, 100V, 32A, 36mΩ

Catalog

PowerTrench® MOSFET, N-Channel, 100V, 32A, 36mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Power Dissipation (Max) [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Grade	Qualification
ON Semiconductor FDD3682	1250 pF	6 V 10 V	100 V	20 V	5.5 A 32 A	Surface Mount	TO-252AA	-55 °C	175 ░C	N-Channel	95 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	28 nC	MOSFET (Metal Oxide)	4 V	36 mOhm
ON Semiconductor FDD3682-F085	1250 pF	6 V 10 V	100 V	20 V	5.5 A 32 A	Surface Mount	TO-252AA	-55 °C	175 ░C	N-Channel	95 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	28 nC	MOSFET (Metal Oxide)	4 V	36 mOhm	Automotive	AEC-Q101

PowerTrench® MOSFET, N-Channel, 100V, 32A, 36mΩ

• rDS(ON)= 32mΩ(Typ.), VGS= 10V, ID= 32A

• Qg(tot) = 18.5nC (Typ.), VGS= 10V

• Low Miller Charge

• Low QrrBody Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101Formerly developmental type 82755

• RoHS Compliant

PowerTrench®MOSFET, N-Channel, 100V, 32A, 36mΩ