SI4483 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 30V 10A 8SO
| Part | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Drain to Source Voltage (Vdss) | Technology | Current - Continuous Drain (Id) @ 25°C | FET Type | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 1.5 W | 4.5 V 10 V | 3 V | -55 °C | 150 °C | 8-SOIC | 30 V | MOSFET (Metal Oxide) | 10 A | P-Channel | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 25 V |
Vishay General Semiconductor - Diodes Division | 1.5 W | 4.5 V 10 V | 3 V | -55 °C | 150 °C | 8-SOIC | 30 V | MOSFET (Metal Oxide) | 10 A | P-Channel | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 25 V |