Catalog
Dual P-Channel Enhancement Mode MOSFET
Beta
⌘K
Dual P-Channel Enhancement Mode MOSFET
Dual P-Channel Enhancement Mode MOSFET
| Part | Package / Case | FET Feature | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Mounting Type | Rds On (Max) @ Id, Vgs | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Power - Max [Max] | Configuration | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | SOT-23-6 | Logic Level Gate | SOT-26 | 320 pF | 20 V | Surface Mount | 150 mOhm | MOSFET (Metal Oxide) | 150 °C | -65 °C | 1 V | 600 mW | 2 P-Channel | 2 A |