Catalog
4.5V Drive Nch MOSFET
| Part | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Technology | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Operating Temperature | Package / Case | Vgs (Max) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 4.5 V 10 V | 8.8 mOhm | 30 V | 590 pF | MOSFET (Metal Oxide) | 2.5 V | 3 W 22 W | 15 A 40 A | 8-HSOP | 150 °C | 8-PowerTDFN | 20 V | Surface Mount | 10 nC | N-Channel |
Description
AI
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.