SIHG35 Series

Catalog

MOSFET N-CH 600V 32A TO247AC

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SIHG35N60EF-GE3	2568 pF	TO-247-3	Through Hole	32 A	600 V	250 W	30 V	MOSFET (Metal Oxide)	4 V	97 mOhm	-55 °C	150 °C	TO-247AC	N-Channel	10 V	134 nC
Vishay General Semiconductor - Diodes Division SIHG35N60E-GE3	2760 pF	TO-247-3	Through Hole	32 A	600 V	250 W	30 V	MOSFET (Metal Oxide)	4 V	94 mOhm	-55 °C	150 °C	TO-247AC	N-Channel	10 V	132 nC