TK4A65 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET N-CH 650V 3.5A TO220SIS
| Part | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Technology | Rds On (Max) @ Id, Vgs | Mounting Type | Package / Case | Vgs (Max) | Drain to Source Voltage (Vdss) | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 3.5 A | 35 W | MOSFET (Metal Oxide) | 1.9 Ohm | Through Hole | TO-220-3 Full Pack | 30 V | 650 V | 150 °C | 600 pF | N-Channel | 10 V | TO-220SIS | 4.4 V | 12 nC |