SI1058 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 20V 1.3A SC89-6
| Part | Rds On (Max) @ Id, Vgs [Max] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 91 mOhm | MOSFET (Metal Oxide) | 2.5 V 4.5 V | 1.3 A | Surface Mount | N-Channel | -55 °C | 150 °C | 20 V | 12 V | 380 pF | 236 mW | SOT-563 SOT-666 | 5.9 nC | 1.55 V | SC-89 (SOT-563F) |
Vishay General Semiconductor - Diodes Division | 91 mOhm | MOSFET (Metal Oxide) | 2.5 V 4.5 V | 1.3 A | Surface Mount | N-Channel | -55 °C | 150 °C | 20 V | 12 V | 380 pF | 236 mW | SOT-563 SOT-666 | 5.9 nC | 1.55 V | SC-89 (SOT-563F) |