FQD7N20L Series

Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 5.5 A, 750 mΩ, DPAK

Catalog

Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 5.5 A, 750 mΩ, DPAK

Part	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Mounting Type
ON Semiconductor FQD7N20LTM	-55 °C	150 °C	500 pF	750 mOhm	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA	2 V	10 V	5 V	200 V	N-Channel	20 V	5.5 A	9 nC	2.5 W 45 W	Surface Mount

Catalog

Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 5.5 A, 750 mΩ, DPAK

Key Features

• 5.5A, 200V, RDS(on)= 750mΩ(Max.) @VGS= 10 V, ID= 2.75A

• Low gate charge ( Typ. 6.8nC)

• Low Crss( Typ. 8.5pF)

• 100% avalanche tested

• RoHS compliant

• Low level gate drive requirement allowing direct operation from logic drivers

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.