Power MOSFET, Single N-Channel, 80V, 33A, 21.1mΩ
Power MOSFET, Single N-Channel, 80V, 33A, 21.1mΩ
| Part | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Rds On (Max) @ Id, Vgs | Technology | Package / Case | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 3.1 W 46 W | -55 °C | 175 ░C | N-Channel | 21.1 mOhm | MOSFET (Metal Oxide) | 8-PowerWDFN | 8 A 30 A | 20 V | Surface Mount | 6 V 10 V | 4 V | 510 pF | 80 V | 8-WDFN (3.3x3.3) | 8.7 nC |