LM5107 Series

1.4-A, 100-V half bridge gate driver with 8-V UVLO

Catalog

1.4-A, 100-V half bridge gate driver with 8-V UVLO

Part	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Driven Configuration	High Side Voltage - Max (Bootstrap) [Max]	Channel Type	Gate Type	Package / Case	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Input Type	Number of Drivers	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Supply [Min]	Voltage - Supply [Max]	Package / Case [y]	Package / Case [x]
Texas Instruments LM5107SDX/NOPB	15 ns	15 ns	Half-Bridge	118 V	Independent	N-Channel MOSFET	8-WDFN Exposed Pad	2.2 V	0.8 V	Non-Inverting	2	1.3 A	1.4 A	Surface Mount	8-WSON (4x4)	-40 °C	125 ¯C	8 V	14 V
Texas Instruments LM5107MA/NOPB	15 ns	15 ns	Half-Bridge	118 V	Independent	N-Channel MOSFET	8-SOIC	2.2 V	0.8 V	Non-Inverting	2	1.3 A	1.4 A	Surface Mount	8-SOIC	-40 °C	125 ¯C	8 V	14 V	3.9 mm	0.154 in
Texas Instruments LM5107SD/NOPB	15 ns	15 ns	Half-Bridge	118 V	Independent	N-Channel MOSFET	8-WDFN Exposed Pad	2.2 V	0.8 V	Non-Inverting	2	1.3 A	1.4 A	Surface Mount	8-WSON (4x4)	-40 °C	125 ¯C	8 V	14 V
Texas Instruments LM5107MA	15 ns	15 ns	Half-Bridge	118 V	Independent	N-Channel MOSFET	8-SOIC	2.2 V	0.8 V	Non-Inverting	2	1.3 A	1.4 A	Surface Mount	8-SOIC	-40 °C	125 ¯C	8 V	14 V	3.9 mm	0.154 in
Texas Instruments LM5107MAX/NOPB	15 ns	15 ns	Half-Bridge	118 V	Independent	N-Channel MOSFET	8-SOIC	2.2 V	0.8 V	Non-Inverting	2	1.3 A	1.4 A	Surface Mount	8-SOIC	-40 °C	125 ¯C	8 V	14 V	3.9 mm	0.154 in
Texas Instruments LM5107SDX	15 ns	15 ns	Half-Bridge	118 V	Independent	N-Channel MOSFET	8-WDFN Exposed Pad	2.2 V	0.8 V	Non-Inverting	2	1.3 A	1.4 A	Surface Mount	8-WSON (4x4)	-40 °C	125 ¯C	8 V	14 V
Texas Instruments LM5107MAX	15 ns	15 ns	Half-Bridge	118 V	Independent	N-Channel MOSFET	8-SOIC	2.2 V	0.8 V	Non-Inverting	2	1.3 A	1.4 A	Surface Mount	8-SOIC	-40 °C	125 ¯C	8 V	14 V	3.9 mm	0.154 in

Catalog

1.4-A, 100-V half bridge gate driver with 8-V UVLO

Key Features

• Drives Both a High Side and Low Side N-Channel MOSFETHigh Peak Output Current (1.4-A Sink / 1.3-A Source)Independent TTL Compatible InputsIntegrated Bootstrap DiodeBootstrap Supply Voltage to 118 V DCFast Propagation Times (27-ns Typical)Drives 1000 pF Load With 15-ns Rise and Fall TimesExcellent Propagation Delay Matching (2-ns Typical)Supply Rail Undervoltage LockoutLow Power ConsumptionPin Compatible With ISL6700Packages:SOICWSON (4 mm × 4 mm)Drives Both a High Side and Low Side N-Channel MOSFETHigh Peak Output Current (1.4-A Sink / 1.3-A Source)Independent TTL Compatible InputsIntegrated Bootstrap DiodeBootstrap Supply Voltage to 118 V DCFast Propagation Times (27-ns Typical)Drives 1000 pF Load With 15-ns Rise and Fall TimesExcellent Propagation Delay Matching (2-ns Typical)Supply Rail Undervoltage LockoutLow Power ConsumptionPin Compatible With ISL6700Packages:SOICWSON (4 mm × 4 mm)

Description

The LM5107 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100-V. The outputs are independently controlled with TTL compatible input thresholds. An integrated on chip high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high side gate driver. Undervoltage lockout is provided on both the low side and the high side power rails. The device is available in the SOIC and the thermally enhanced WSON packages. The LM5107 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100-V. The outputs are independently controlled with TTL compatible input thresholds. An integrated on chip high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high side gate driver. Undervoltage lockout is provided on both the low side and the high side power rails. The device is available in the SOIC and the thermally enhanced WSON packages.