IRFZ14 Series

Catalog

MOSFET N-CH 60V 10A D2PAK

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division IRFZ14STRR	3.7 W 43 W	4 V	-55 °C	175 ░C	TO-263 (D2PAK)	60 V	20 V	10 V	Surface Mount	11 nC	N-Channel	MOSFET (Metal Oxide)	200 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	300 pF	10 A
Vishay General Semiconductor - Diodes Division IRFZ14L	3.7 W 43 W	4 V	-55 °C	175 ░C	TO-262-3	60 V	20 V	10 V	Through Hole	11 nC	N-Channel	MOSFET (Metal Oxide)	200 mOhm	I2PAK TO-262-3 Long Leads TO-262AA	300 pF	10 A
Vishay General Semiconductor - Diodes Division IRFZ14	43 W	4 V	-55 °C	175 ░C	TO-220AB	60 V	20 V	10 V	Through Hole	11 nC	N-Channel	MOSFET (Metal Oxide)	200 mOhm	TO-220-3	300 pF	10 A
Vishay General Semiconductor - Diodes Division IRFZ14PBF-BE3	43 W	4 V	-55 °C	175 ░C	TO-220AB	60 V	20 V		Through Hole	11 nC	N-Channel	MOSFET (Metal Oxide)	200 mOhm	TO-220-3	300 pF	10 A
Vishay General Semiconductor - Diodes Division IRFZ14SPBF	3.7 W 43 W	4 V	-55 °C	175 ░C	TO-263 (D2PAK)	60 V	20 V	10 V	Surface Mount	11 nC	N-Channel	MOSFET (Metal Oxide)	200 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	300 pF	10 A