FDC365P Series

P-Channel Power Trench® MOSFET, -35V, -4.3A, 55mΩ

Catalog

P-Channel Power Trench® MOSFET, -35V, -4.3A, 55mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Type
ON Semiconductor FDC365P	4.5 V 10 V	55 mOhm	35 V	20 V	Surface Mount	4.3 A	-55 °C	150 °C	MOSFET (Metal Oxide)	SOT-23-6 Thin TSOT-23-6	3 V	SuperSOT™-6	705 pF	P-Channel

Catalog

P-Channel Power Trench® MOSFET, -35V, -4.3A, 55mΩ

Key Features

• Max rDS(on)= 55mΩ at VGS= 10V, ID= -4.2A

• Max rDS(on)= 80mΩ at VGS= -4.5V, ID= -3.2A

• RoHS compliant

Description

This P-Channel MOSFET has been produced using a proprietary PowerTrench®technology to deliver low rDS(on)and optimized BVdsscapability to offer superior performance benefit in the applications.