YQ60NL10CDFH Series

Trench MOS Structure, 100V, 60A, LPDL, Highly Efficient SBD for Automotive

Catalog

Trench MOS Structure, 100V, 60A, LPDL, Highly Efficient SBD for Automotive

Part	Operating Temperature - Junction	Grade	Supplier Device Package	Qualification	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr	Technology	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Diode Configuration	Package / Case	Speed
Rohm Semiconductor YQ60NL10CDFHTL	150 ¯C	Automotive	TO-263L	AEC-Q101	60 A	200 µA	Schottky	770 mV	100 V	Surface Mount	1 Pair Common Cathode	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 mA 500 ns

Catalog

Trench MOS Structure, 100V, 60A, LPDL, Highly Efficient SBD for Automotive

Description

The YQ60NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VFand low IR. While its low VFit achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.