High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.135 Ω@10V, DFN 8 x 8, DTMOSⅣ-H
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.135 Ω@10V, DFN 8 x 8, DTMOSⅣ-H
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.135 Ω@10V, DFN 8 x 8, DTMOSⅣ-H
| Part | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Operating Temperature | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type | Technology | Supplier Device Package | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 150 mOhm | 180 W | 150 °C | 30 V | 25 A | N-Channel | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | 4.5 V | 2400 pF | 4-VSFN Exposed Pad | 10 V | Surface Mount | 60 nC | 600 V | |
 Toshiba Semiconductor and Storage | 135 mOhm | 180 W | 150 °C | 30 V | 25 A | N-Channel | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | 3.5 V | 2400 pF | 4-VSFN Exposed Pad | 10 V | Surface Mount | 600 V | 40 nC |