IR21814 Series

Manufacturer: INFINEON

Catalog

EICEDRIVER™ 600 V HIGH-SIDE AND LOW-SIDE DRIVER IC WITH TYPICAL 1.9 A SOURCE AND 2.3 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 14N PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: SEPARATE PIN FOR LOGIC GROUND

Part	Gate Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Type	Driven Configuration	Package / Case	Package / Case	Mounting Type	Number of Drivers	Voltage - Supply [Max]	Voltage - Supply [Min]	Channel Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	High Side Voltage - Max (Bootstrap) [Max]	Logic Voltage - VIL, VIH	Supplier Device Package	Package / Case	Package / Case
INFINEON IR21814STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	Non-Inverting	Half-Bridge	0.154 in 3.9 mm	14-SOIC	Surface Mount	2	20 V	10 VDC	Independent	20 ns	40 ns	1.9 A	2.3 A	600 V	0.8 V 2.7 V
INFINEON IR21814PBF	IGBT MOSFET (N-Channel)	-40 C	125 °C	Non-Inverting	Half-Bridge		14-DIP	Through Hole	2	20 V	10 VDC	Independent	20 ns	40 ns	1.9 A	2.3 A	600 V	0.8 V 2.7 V	14-DIP	0.3 in	7.62 mm
INFINEON IR21814PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	Non-Inverting	Half-Bridge		14-DIP	Through Hole	2	20 V	10 VDC	Independent	20 ns	40 ns	1.9 A	2.3 A	600 V	0.8 V 2.7 V	14-DIP	0.3 in	7.62 mm
INFINEON IR21814S	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	Non-Inverting	Half-Bridge	0.154 in 3.9 mm	14-SOIC	Surface Mount	2	20 V	10 VDC	Independent	20 ns	40 ns	1.9 A	2.3 A	600 V	0.8 V 2.7 V
INFINEON IR21814	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	Non-Inverting	Half-Bridge		14-DIP	Through Hole	2	20 V	10 VDC	Independent	20 ns	40 ns	1.9 A	2.3 A	600 V	0.8 V 2.7 V	14-DIP	0.3 in	7.62 mm