TK100A06N1 Series

Catalog

12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.0027 Ω@10V, TO-220SIS, U-MOSⅧ-H

Part	FET Type	Supplier Device Package	Power Dissipation (Max)	Operating Temperature	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology
Toshiba Semiconductor and Storage TK100A06N1,S4X	N-Channel	TO-220SIS	45 W	150 °C	Through Hole	100 A	2.7 mOhm	140 nC	TO-220-3 Full Pack	30 V	10500 pF	20 V	10 V	60 V	MOSFET (Metal Oxide)