IMW65R040 Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 46 A, 650 V, 0.036 OHM, TO-247
| Part | Technology | Mounting Type | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Package / Case | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Operating Temperature [Max] | Operating Temperature [Min] | Vgs (Max) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | SiC (Silicon Carbide Junction Transistor) | Through Hole | 172 W | 15 V 20 V | PG-TO247-3-40 | 650 V | 46 A | 28 nC | TO-247-3 | N-Channel | 997 pF | 5.6 V | 175 °C | -55 °C | -7 V 23 V | 36 mOhm |