LSIC1MO170T0750 Series

1700V/750mohm SiC MOSFET TO-263-7L

Catalog

1700V/750mohm SiC MOSFET TO-263-7L

Part	Supplier Device Package	Vgs (Max) [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type
LITTELFUSE LSIC1MO170T0750	TO-263-7L	-6 V 22 V	65 W	1700 V	6.4 A	1 Ohm	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	175 °C	-55 °C	11 nC	N-Channel	200 pF	Surface Mount

Catalog

1700V/750mohm SiC MOSFET TO-263-7L

Description

Our new 1700V, 750mOhm Silicon Carbide (SiC) MOSFETs are presented in TO-263-7L package. The separated source pin reduces significantly the parasitic source inductance path to the driver, which helps improve the efficiency in high power applications. The maximum operating junction temperature is 175 °C. These MOSFETs are ideal for high frequency applications in which high efficiency is desired.