Catalog
60 V, 2.7 A PNP low VCEsat transistor
Description
AI
PNP low VCEsattransistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.
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60 V, 2.7 A PNP low VCEsat transistor
60 V, 2.7 A PNP low VCEsat transistor
| Part | Operating Temperature | Supplier Device Package | DC Current Gain (hFE) (Min) @ Ic, Vce | Transistor Type | Frequency - Transition | Package / Case | Qualification | Grade | Mounting Type | Vce Saturation (Max) @ Ib, Ic | Current - Collector (Ic) (Max) [Max] | Power - Max [Max] | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 150 °C | TO-236AB | 200 | PNP | 150 MHz | SC-59 SOT-23-3 TO-236-3 | AEC-Q101 | Automotive | Surface Mount | 360 mV | 2.7 A | 390 mW | 100 nA | 60 V |