1N6479 Series

Catalog

DIODE GEN PURP 100V 1A DO213AB

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Technology	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Supplier Device Package	Speed [Min]	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division 1N6479-E3/97	175 ░C	-65 C	Surface Mount	10 µA	1.1 V	Standard	8 pF	100 V	DO-213AB MELF (Glass)	DO-213AB	200 mA 500 ns	1 A
Vishay General Semiconductor - Diodes Division 1N6479HE3/97	175 ░C	-65 C	Surface Mount	10 µA	1.1 V	Standard	8 pF	100 V	DO-213AB MELF (Glass)	DO-213AB	200 mA 500 ns	1 A
Vishay General Semiconductor - Diodes Division 1N6479-E3/96	175 ░C	-65 C	Surface Mount	10 µA	1.1 V	Standard	8 pF	100 V	DO-213AB MELF (Glass)	DO-213AB	200 mA 500 ns	1 A