HMC8500 Series

10 W (40 dBm), 0.01 GHz to 2.8 GHz, GaN Power Amplifier

Manufacturer: Analog Devices Inc./Maxim Integrated

Catalog

10 W (40 dBm), 0.01 GHz to 2.8 GHz, GaN Power Amplifier

Part	Supplier Device Package	Voltage - Supply [Min]	Voltage - Supply [Max]	Frequency [Min]	Frequency [Max]	Current - Supply	Test Frequency [Min]	Test Frequency [Max]	Noise Figure	Gain	RF Type	Package / Case	Mounting Type	Voltage - Supply
Analog Devices Inc./Maxim Integrated HMC8500PM5E	32-LFCSP-CAV (5x5)	24 V	32 VDC	10 MHz	2.8 GHz	100 mA	1.3 GHz	2.8 GHz	4.5 dB	15 dB	General Purpose	32-LFQFN Exposed Pad CSP	Surface Mount
Analog Devices Inc./Maxim Integrated HMC8500LP5DETR	32-LFCSP-CAV (5x5)			10 MHz	2.8 GHz	100 mA			5 dB	20 dBi		32-LFQFN Exposed Pad CSP	Surface Mount	28 V
Analog Devices Inc./Maxim Integrated HMC8500LP5DE	32-LFCSP-CAV (5x5)			10 MHz	2.8 GHz	100 mA			5 dB	20 dBi		32-LFQFN Exposed Pad CSP	Surface Mount	28 V

Catalog

10 W (40 dBm), 0.01 GHz to 2.8 GHz, GaN Power Amplifier

Description

The HMC8500PM5E is a gallium nitride (GaN), broadband power amplifier delivering 10 W (40 dBm), typical, with up to 55% power added efficiency (PAE) across an instantaneous bandwidth of 0.01 GHz to 2.8 GHz, at an input power of 30 dBm. The typical gain flatness is 3 dB at small signal levels.The HMC8500PM5E is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification.The HMC8500PM5E amplifier is externally tuned using low cost, surface-mount components and is available in a compact LFCSP package.Note that, throughout this data sheet, multifunction pins, such as RFIN/VGG, are referred to either by the entire pin name or by a single function of the pin, for example, RFIN, when only that function is relevantAPPLICATIONSExtended battery operation for public mobile radiosPower amplifier stage for wireless infrastructuresTest and measurement equipmentCommercial and military radarsGeneral-purpose transmitter amplification