High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.11 Ω@10V, TO-247-4L, DTMOSⅥ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.11 Ω@10V, TO-247-4L, DTMOSⅥ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.11 Ω@10V, TO-247-4L, DTMOSⅥ
| Part | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Power Dissipation (Max) | Supplier Device Package | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | FET Type | Operating Temperature | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | TO-247-4 | 40 nC | Through Hole | 190 W | TO-247-4L(T) | 650 V | 4 V | 10 V | 30 V | MOSFET (Metal Oxide) | 2250 pF | 110 mOhm | N-Channel | 150 °C | 24 A |