AO482 Series
Manufacturer: Alpha & Omega Semiconductor Inc.
MOSFET 2N-CH 30V 8A 8SOIC
| Part | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Package / Case | Package / Case | Package / Case | Technology | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] | Configuration | FET Feature | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 8-SOIC | 150 °C | -55 °C | 2.4 V | 0.154 in | 8-SOIC | 3.9 mm | MOSFET (Metal Oxide) | 8 A | 2 W | 2 N-Channel (Dual) | Logic Level Gate | 18 nC | 30 V | 19 mOhm | Surface Mount | 888 pF | |
Alpha & Omega Semiconductor Inc. | 8-SOIC | 150 °C | -55 °C | 3 V | 0.154 in | 8-SOIC | 3.9 mm | MOSFET (Metal Oxide) | 2 W | 2 N-Channel (Dual) | Logic Level Gate | 60 V | 25 mOhm | Surface Mount | 2300 pF | 58 nC | ||
Alpha & Omega Semiconductor Inc. | 8-SOIC | 150 °C | -55 °C | 2.4 V | 0.154 in | 8-SOIC | 3.9 mm | MOSFET (Metal Oxide) | 8 A | 2 W | 2 N-Channel (Dual) | 18 nC | 30 V | 19 mOhm | Surface Mount | 888 pF | ||
Alpha & Omega Semiconductor Inc. | 8-SOIC | 150 °C | -55 °C | 3 V | 0.154 in | 8-SOIC | 3.9 mm | MOSFET (Metal Oxide) | 2 W | 2 N-Channel (Dual) | Logic Level Gate | 60 V | 56 mOhm | Surface Mount | 540 pF | 10.5 nC |