High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.088 Ω@10V, TO-220, DTMOSⅣ-H
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.088 Ω@10V, TO-220, DTMOSⅣ-H
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.088 Ω@10V, TO-220, DTMOSⅣ-H
| Part | Drain to Source Voltage (Vdss) | Package / Case | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Supplier Device Package | Mounting Type | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 600 V | TO-220-3 | N-Channel | MOSFET (Metal Oxide) | 10 V | 30 V | 3000 pF | 88 mOhm | 30.8 A | 230 W | 65 nC | 3.5 V | TO-220 | Through Hole | 150 °C |