IS61WV51216EEALL Series

Catalog

SRAM 8MB,HIGH-SPEED/LOW POWER,ASYNC WITH ECC,512K X 16, 20NS,1.65V-2.2V, 48 BALL MBGA (6X8 MM), ROHS

Part	Memory Interface	Operating Temperature [Max]	Operating Temperature [Min]	Write Cycle Time - Word, Page [custom]	Voltage - Supply [Max]	Voltage - Supply [Min]	Technology	Memory Format	Supplier Device Package	Memory Organization	Memory Size	Memory Type	Package / Case	Mounting Type	Access Time
ISSI, Integrated Silicon Solution Inc IS61WV51216EEALL-20BLI	Parallel	85 C	-40 ¯C	20 ns	2.2 V	1.65 V	SRAM - Asynchronous	SRAM	48-TFBGA (6x8)	512K x 16	1024 KB	Volatile	48-TFBGA	Surface Mount	20 ns