IRFBE30 Series

Catalog

MOSFET N-CH 800V 4.1A TO220AB

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Technology	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division IRFBE30PBF-BE3	4.1 A	78 nC	3 Ohm	20 V	1300 pF	Through Hole	-55 °C	150 °C	TO-220AB	125 W	4 V	N-Channel	MOSFET (Metal Oxide)	TO-220-3	800 V
Vishay General Semiconductor - Diodes Division IRFBE30	4.1 A	78 nC	3 Ohm	20 V	1300 pF	Through Hole	-55 °C	150 °C	TO-220AB	125 W	4 V	N-Channel	MOSFET (Metal Oxide)	TO-220-3	800 V	10 V
Vishay General Semiconductor - Diodes Division IRFBE30STRL	4.1 A	78 nC	3 Ohm	20 V	1300 pF	Surface Mount	-55 °C	150 °C	TO-263 (D2PAK)	125 W	4 V	N-Channel	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	800 V	10 V