IMZA65R020 Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 83 A, 650 V, 0.018 OHM, TO-247
| Part | Technology | Package / Case | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Mounting Type | Vgs (Max) | FET Type | Rds On (Max) @ Id, Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | SiC (Silicon Carbide Junction Transistor) | TO-247-4 | 5.6 V | 57 nC | 273 W | Through Hole | -7 V 23 V | N-Channel | 18 mOhm | 83 A | 650 V | 175 °C | -55 °C | PG-TO247-4-8 | 15 V 20 V | 2038 pF |