IPP023 Series

Manufacturer: INFINEON

Catalog

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; TO-220 PACKAGE; 2.3 MOHM;

Part	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Power Dissipation (Max)	Technology	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON IPP023N10N5AKSA1	20 V	Through Hole	15600 pF	PG-TO220-3	375 W	MOSFET (Metal Oxide)	3.8 V	TO-220-3	120 A	N-Channel	210 nC	175 °C	-55 °C	100 V	6 V 10 V	2.3 mOhm
INFINEON IPP023N04NGXKSA1	20 V	Through Hole	10000 pF	PG-TO220-3	167 W	MOSFET (Metal Oxide)	4 V	TO-220-3	90 A	N-Channel		175 °C	-55 °C	40 V	10 V		2.3 mOhm	120 nC
INFINEON IPP023N08N5AKSA1	20 V	Through Hole	12100 pF	PG-TO220-3	300 W	MOSFET (Metal Oxide)	3.8 V	TO-220-3	120 A	N-Channel		175 °C	-55 °C	80 V	6 V 10 V	2.3 mOhm		166 nC