Catalog
650V, 15A, THD, Silicon-carbide (SiC) SBD
Description
AI
Shorter recovery time, enabling high-speed switching.
Beta
⌘K
650V, 15A, THD, Silicon-carbide (SiC) SBD
650V, 15A, THD, Silicon-carbide (SiC) SBD
| Part | Reverse Recovery Time (trr) | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If [Max] | Speed | Mounting Type | Operating Temperature - Junction | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Technology | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 0 ns | TO-220FM | 650 V | 1.5 V | 500 mA | Through Hole | 175 °C | 15 A | 75 µA | SiC (Silicon Carbide) Schottky | TO-220-2 Full Pack |