MSRTA60080 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULE GP 800V 600A 3TOWER
| Part | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) (per Diode) | Voltage - DC Reverse (Vr) (Max) [Max] | Speed [Min] | Package / Case | Mounting Type | Current - Reverse Leakage @ Vr | Diode Configuration | Technology | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Three Tower | 1.2 V | 600 A | 800 V | 200 mA 500 ns | Three Tower | Chassis Mount | 25 µA | 1 Pair Common Cathode | Standard | -55 °C | 150 °C |