HMC1099PM5E Series

10 W (40 dBm), 0.01 GHz to 1.1 GHz, GaN Power Amplifier

Manufacturer: Analog Devices Inc./Maxim Integrated

Catalog

10 W (40 dBm), 0.01 GHz to 1.1 GHz, GaN Power Amplifier

Part	Current - Supply	Mounting Type	Noise Figure	Supplier Device Package	Package / Case	Frequency [Max]	Frequency [Min]	RF Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Test Frequency [Max]	Test Frequency [Min]	Gain
Analog Devices Inc./Maxim Integrated HMC1099PM5E	100 mA	Surface Mount	5 dB	32-LFCSP-CAV (5x5)	32-LFQFN Exposed Pad CSP	1.1 GHz	10 MHz	General Purpose	30 VDC	24 V	1.1 GHz	800 MHz	18 dBi
Analog Devices Inc./Maxim Integrated HMC1099PM5ETR	100 mA	Surface Mount	5 dB	32-LFCSP-CAV (5x5)	32-LFQFN Exposed Pad CSP	1.1 GHz	10 MHz	General Purpose	30 VDC	24 V	1.1 GHz	800 MHz	18 dBi

Catalog

10 W (40 dBm), 0.01 GHz to 1.1 GHz, GaN Power Amplifier

Description

The HMC1099PM5E is a gallium nitride (GaN), broadband power amplifier delivering >10 W with up to 69% PAE across an instantaneous bandwidth of 0.01 GHz to 1.1 GHz, and with a ±0.5 dB typical gain flatness.The HMC1099PM5E is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification.The HMC1099PM5E amplifier is externally tuned using low cost, surface-mount components and is available in a compact LFCSP package.Multifunction pin names may be referenced by their relevant function only.ApplicationsExtended battery operation for public mobile radiosPower amplifier stage for wireless infrastructuresTest and measurement equipmentCommercial and military radarsGeneral-purpose transmitter amplification