FJB102 Series

100V High Voltage Power Darlington Transistor

Catalog

100V High Voltage Power Darlington Transistor

Part	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Package / Case	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Mounting Type
ON Semiconductor FJB102TM	50 µA	150 °C	100 V	8 A	80 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	1000 hFE	2.5 V	Surface Mount

100V High Voltage Power Darlington Transistor

• High DC Current Gain : hFE=1000 @ VCE= 4 V, IC= 3 A (Min.)

• Low Collector-Emitter Saturation Voltage

• High Collector-Emitter Sustaining Voltage

• Monolithic Construction with Built-in Base-Emitter Shunt Resistors

• Industrial Use