High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.23 Ω@10V, TO-3P(N), DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.23 Ω@10V, TO-3P(N), DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.23 Ω@10V, TO-3P(N), DTMOSⅣ
| Part | FET Type | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Vgs(th) (Max) @ Id [Max] | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Technology | Drain to Source Voltage (Vdss) | Supplier Device Package | Operating Temperature | Vgs (Max) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | N-Channel | 15.8 A | Through Hole | 4.5 V | 43 nC | 1350 pF | 10 V | 130 W | 230 mOhm | MOSFET (Metal Oxide) | 600 V | TO-3P(N) | 150 °C | 30 V | SC-65-3 TO-3P-3 |