SN74LVC1G32-EP Series

Enhanced product, 1-ch, 2-input 1.65-V to 5.5-V 32-mA drive strength OR gate

Catalog

Enhanced product, 1-ch, 2-input 1.65-V to 5.5-V 32-mA drive strength OR gate

Part	Input Logic Level - High [Min]	Input Logic Level - High [Max]	Mounting Type	Number of Circuits	Current - Output High, Low [y]	Current - Output High, Low [x]	Operating Temperature [Max]	Operating Temperature [Min]	Number of Inputs	Voltage - Supply [Max]	Voltage - Supply [Min]	Input Logic Level - Low [Max]	Input Logic Level - Low [Min]	Current - Quiescent (Max) [Max]	Supplier Device Package	Logic Type	Package / Case	Max Propagation Delay @ V, Max CL	Grade	Qualification	Supplier Device Package [y]	Supplier Device Package [x]
Texas Instruments SN74LVC1G32DCKTG4	1.7 V	2 V	Surface Mount	1	32 mA	32 mA	125 °C	-40 °C	2	5.5 V	1.65 V	0.8 V	0.7 V	10 µA	SC-70-5	OR Gate	5-TSSOP SC-70-5 SOT-353	4 ns
Texas Instruments SN74LVC1G32DCKR-NG	1.7 V	2 V	Surface Mount	1	32 mA	32 mA	125 °C	-40 °C	2	5.5 V	1.65 V	0.8 V	0.7 V	10 µA	SC-70-5	OR Gate	5-TSSOP SC-70-5 SOT-353	4.5 ns
Texas Instruments SN74LVC1G32MDBVREP	1.7 V	2 V	Surface Mount	1	32 mA	32 mA	125 °C	-55 °C	2	5.5 V	1.65 V	0.8 V	0.7 V	10 µA	SOT-23-5	OR Gate	SC-74A SOT-753	4.5 ns
Texas Instruments SN74LVC1G32DRY2	1.7 V	2 V	Surface Mount	1	32 mA	32 mA	125 °C	-40 °C	2	5.5 V	1.65 V	0.8 V	0.7 V		6-SON (1.45x1)	OR Gate	6-UFDFN	4 ns
Texas Instruments SN74LVC1G32DBVT	1.7 V	2 V	Surface Mount	1	32 mA	32 mA	125 °C	-40 °C	2	5.5 V	1.65 V	0.8 V	0.7 V	10 µA	SOT-23-5	OR Gate	SC-74A SOT-753	4 ns
Texas Instruments SN74LVC1G32QDCKRQ1	1.7 V	2 V	Surface Mount	1	32 mA	32 mA	125 °C	-40 °C	2	5.5 V	1.65 V	0.8 V	0.7 V	25 µA	SC-70-5	OR Gate	5-TSSOP SC-70-5 SOT-353	6 ns	Automotive	AEC-Q100
Texas Instruments SN74LVC1G32DSF2	1.7 V	2 V	Surface Mount	1	32 mA	32 mA	125 °C	-40 °C	2	5.5 V	1.65 V	0.8 V	0.7 V	10 µA	6-SON (1x1)	OR Gate	6-XFDFN	4 ns
Texas Instruments SN74LVC1G32MDCKREP	1.7 V	2 V	Surface Mount	1	32 mA	32 mA	125 °C	-55 °C	2	5.5 V	1.65 V	0.8 V	0.7 V	10 µA	SC-70-5	OR Gate	5-TSSOP SC-70-5 SOT-353	4.5 ns
Texas Instruments SN74LVC1G32DPWR	1.7 V	2 V	Surface Mount	1	32 mA	32 mA	125 °C	-40 °C	2	5.5 V	1.65 V	0.8 V	0.7 V	10 µA	4-X2SON	OR Gate	4-XFDFN Exposed Pad	4 ns			0.8	0.8
Texas Instruments SN74LVC1G32DBVRG4	1.7 V	2 V	Surface Mount	1	32 mA	32 mA	125 °C	-40 °C	2	5.5 V	1.65 V	0.8 V	0.7 V	10 µA	SOT-23-5	OR Gate	SC-74A SOT-753	4 ns

Catalog

Enhanced product, 1-ch, 2-input 1.65-V to 5.5-V 32-mA drive strength OR gate

Key Features

• Controlled BaselineOne Assembly/Test Site, One Fabrication SiteExtended Temperature Performance of -55°C to 125°CEnhanced Diminishing Manufacturing Sources (DMS) SupportEnhanced Product-Change NotificationQualification Pedigree(1)Supports 5-V VCCOperationInputs Accept Voltages to 5.5 VMax tpdof 3.6 ns at 3.3 VLow Power Consumption, 10 µA Max ICC±24-mA Output Drive at 3.3 VIoffSupports Partial Power Down Mode OperationLatch-Up Performance Exceeds 100 mA Per JESD 78, Class IIESD Protection Exceeds JESD 222000-V Human-Body Model (A114-A)200-V Machine Model (A115-A)1000-V Charged-Device Model (C101)(1)Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.Controlled BaselineOne Assembly/Test Site, One Fabrication SiteExtended Temperature Performance of -55°C to 125°CEnhanced Diminishing Manufacturing Sources (DMS) SupportEnhanced Product-Change NotificationQualification Pedigree(1)Supports 5-V VCCOperationInputs Accept Voltages to 5.5 VMax tpdof 3.6 ns at 3.3 VLow Power Consumption, 10 µA Max ICC±24-mA Output Drive at 3.3 VIoffSupports Partial Power Down Mode OperationLatch-Up Performance Exceeds 100 mA Per JESD 78, Class IIESD Protection Exceeds JESD 222000-V Human-Body Model (A114-A)200-V Machine Model (A115-A)1000-V Charged-Device Model (C101)(1)Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

Description

This single 2-input positive-OR gate is designed for 1.65-V to 5.5-V VCCoperation. The SN74LVC1G32 device performs the Boolean function Y = A + B or Y =A\ + B\in positive logic. The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range. The SN74LVC1G32 device is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 × 0.8 mm. This single 2-input positive-OR gate is designed for 1.65-V to 5.5-V VCCoperation. The SN74LVC1G32 device performs the Boolean function Y = A + B or Y =A\ + B\in positive logic. The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range. The SN74LVC1G32 device is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 × 0.8 mm.