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20 V, 2 A P-channel Trench MOSFET
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20 V, 2 A P-channel Trench MOSFET
20 V, 2 A P-channel Trench MOSFET
| Part | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | FET Type | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Grade | Power Dissipation (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Technology | Operating Temperature | Rds On (Max) @ Id, Vgs | Package / Case | Mounting Type | Vgs (Max) [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 1.1 V | 6 nC | P-Channel | 2.5 V | 4.5 V | Automotive | 400 mW | 2.8 W | 380 pF | AEC-Q101 | 20 V | 2 A | MOSFET (Metal Oxide) | 150 °C | 120 mOhm | SC-59 SOT-23-3 TO-236-3 | Surface Mount | 8 V | TO-236AB |