PSMN2R0-55YLH Series

N-channel 55 V, 2.1 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E

Catalog

N-channel 55 V, 2.1 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]
Nexperia USA Inc. PSMN2R0-55YLHX	Surface Mount	2.1 mOhm	MOSFET (Metal Oxide)	200 A	N-Channel	333 W	20 V	175 °C	-55 °C	55 V	4.5 V 10 V	SOT-1023 4-LFPAK	11353 pF	2.2 V	LFPAK56 Power-SO8	184 nC

Catalog

N-channel 55 V, 2.1 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E

Description

200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET in LFPAK56E package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique "SchottkyPlus" technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. The ASFET is particularly suited to 36 V battery powered applications requiring strong avalanche capability, linear mode performance, use at high switching frequencies, and also safe and reliable switching at high load-current.