IR2131 Series
Manufacturer: INFINEON
IC GATE DRVR HALF-BRIDGE 28SOIC
| Part | Gate Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Logic Voltage - VIL, VIH | Number of Drivers | Mounting Type | Input Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Channel Type | Package / Case [custom] | Package / Case | Package / Case [custom] | High Side Voltage - Max (Bootstrap) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Driven Configuration | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Package / Case | Package / Case | Supplier Device Package | Supplier Device Package [x] | Supplier Device Package [y] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 40 ns | 80 ns | 0.8 V 2.2 V | 6 | Surface Mount | Inverting | 20 V | 10 VDC | Independent | 0.295 " | 28-SOIC | 7.5 mm | 600 V | -40 °C | 150 °C | 28-SOIC | Half-Bridge | 250 mA | 500 mA | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 40 ns | 80 ns | 0.8 V 2.2 V | 6 | Through Hole | Inverting | 20 V | 10 VDC | Independent | 28-DIP | 600 V | -40 °C | 150 °C | 28-PDIP | Half-Bridge | 250 mA | 500 mA | 15.24 mm | 0.6 in | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 40 ns | 80 ns | 0.8 V 2.2 V | 6 | Surface Mount | Inverting | 20 V | 10 VDC | Independent | 0.295 " | 28-SOIC | 7.5 mm | 600 V | -40 °C | 150 °C | 28-SOIC | Half-Bridge | 250 mA | 500 mA | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 40 ns | 80 ns | 0.8 V 2.2 V | 6 | Surface Mount | Inverting | 20 V | 10 VDC | Independent | 44-LCC (J-Lead) 32 Leads | 600 V | -40 °C | 150 °C | 44-PLCC | Half-Bridge | 250 mA | 500 mA | 32 | 16.58 | 16.58 | ||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 40 ns | 80 ns | 0.8 V 2.2 V | 6 | Surface Mount | Inverting | 20 V | 10 VDC | Independent | 0.295 " | 28-SOIC | 7.5 mm | 600 V | -40 °C | 150 °C | 28-SOIC | Half-Bridge | 250 mA | 500 mA | |||||
INFINEON | IGBT MOSFET (N-Channel) | 40 ns | 80 ns | 0.8 V 2.2 V | 6 | Through Hole | Inverting | 20 V | 10 VDC | Independent | 28-DIP | 600 V | -40 °C | 150 °C | 28-PDIP | Half-Bridge | 250 mA | 500 mA | 15.24 mm | 0.6 in | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 40 ns | 80 ns | 0.8 V 2.2 V | 6 | Surface Mount | Inverting | 20 V | 10 VDC | Independent | 44-LCC (J-Lead) 32 Leads | 600 V | -40 °C | 150 °C | 44-PLCC | Half-Bridge | 250 mA | 500 mA | 32 | 16.58 | 16.58 | ||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 40 ns | 80 ns | 0.8 V 2.2 V | 6 | Through Hole | Inverting | 20 V | 10 VDC | Independent | 28-DIP | 600 V | -40 °C | 150 °C | 28-PDIP | Half-Bridge | 250 mA | 500 mA | 15.24 mm | 0.6 in | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 40 ns | 80 ns | 0.8 V 2.2 V | 6 | Surface Mount | Inverting | 20 V | 10 VDC | Independent | 0.295 " | 28-SOIC | 7.5 mm | 600 V | -40 °C | 150 °C | 28-SOIC | Half-Bridge | 250 mA | 500 mA | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 40 ns | 80 ns | 0.8 V 2.2 V | 6 | Surface Mount | Inverting | 20 V | 10 VDC | Independent | 44-LCC (J-Lead) 32 Leads | 600 V | -40 °C | 150 °C | 44-PLCC | Half-Bridge | 250 mA | 500 mA | 32 | 16.58 | 16.58 |