IMBF170 Series

Manufacturer: INFINEON

Catalog

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 9.8 A, 1.7 KV, 0.364 OHM, TO-263 (D2PAK)

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Supplier Device Package	Vgs (Max) [Min]	Vgs (Max) [Max]	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
INFINEON IMBF170R450M1XTMA1	450 mOhm	1700 V	107 W	5.7 V	175 °C	-55 °C	N-Channel	PG-TO263-7-13	-10 V	20 V	Surface Mount	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	12 V 15 V	11 nC
INFINEON IMBF170R650M1XTMA1	650 mOhm	1700 V	88 W	5.7 V	175 °C	-55 °C	N-Channel	PG-TO263-7-13	-10 V	20 V	Surface Mount	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	12 V 15 V		422 pF	7.4 A	8 nC