SI5402 Series

Catalog

MOSFET N-CH 30V 4.9A 1206-8

Part	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [x]	FET Type	Vgs (Max)
Vishay General Semiconductor - Diodes Division SI5402BDC-T1-GE3	30 V	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	35 mOhm	4.9 A	4.5 V 10 V	1.3 W	1206-8 ChipFET™	3 V	20 nC	N-Channel	20 V
Vishay General Semiconductor - Diodes Division SI5402BDC-T1-E3	30 V	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	35 mOhm	4.9 A	4.5 V 10 V	1.3 W	1206-8 ChipFET™	3 V	20 nC	N-Channel	20 V
Vishay General Semiconductor - Diodes Division SI5402DC-T1-GE3	30 V	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	35 mOhm	4.9 A	4.5 V 10 V	1.3 W	1206-8 ChipFET™	1 V	20 nC	N-Channel	20 V
Vishay General Semiconductor - Diodes Division SI5402DC-T1-E3	30 V	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	35 mOhm	4.9 A	4.5 V 10 V	1.3 W	1206-8 ChipFET™	1 V	20 nC	N-Channel	20 V