IR2010 Series
Manufacturer: INFINEON
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THE IR2010 IS A 200 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SHUTDOWN IN 14 LEAD PDIP PACKAGE
| Part | Gate Type | Operating Temperature [Min] | Operating Temperature [Max] | Number of Drivers | Driven Configuration | Package / Case | Package / Case | Package / Case | Mounting Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Input Type | Supplier Device Package | Voltage - Supply [Max] | Voltage - Supply [Min] | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Channel Type | High Side Voltage - Max (Bootstrap) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | -40 °C | 150 °C | 2 | Half-Bridge | 14-DIP | 0.3 in | 7.62 mm | Through Hole | 10 ns | 15 ns | Non-Inverting | 14-DIP | 20 V | 10 VDC | 6 V 9.5 V | 3 A | 3 A | Independent | 200 V |
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | -40 °C | 150 °C | 2 | Half-Bridge | 16-SOIC | 0.295 " | 7.5 mm | Surface Mount | 10 ns | 15 ns | Non-Inverting | 16-SOIC | 20 V | 10 VDC | 6 V 9.5 V | 3 A | 3 A | Independent | 200 V |
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | -40 °C | 150 °C | 2 | Half-Bridge | 16-SOIC | 0.295 " | 7.5 mm | Surface Mount | 10 ns | 15 ns | Non-Inverting | 16-SOIC | 20 V | 10 VDC | 6 V 9.5 V | 3 A | 3 A | Independent | 200 V |