M39003/09 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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CAP TANT 68UF 10% 15V AXIAL
| Part | Capacitance | Features | Size / Dimension [x] | Size / Dimension [x] | Size / Dimension [diameter] | Size / Dimension [diameter] | Package / Case | Voltage - Rated | ESR (Equivalent Series Resistance) | Qualification | Grade | Type | Failure Rate | Tolerance | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Manufacturer Size Code |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 68 µF | High Reliability | 17.42 mm | 0.686 in | 0.289 in | 7.34 mm | Axial | 15 V | 95 mOhm | MIL-PRF-39003/9 | Military | Hermetically Sealed | M (1%) | 10 % | -55 °C | 125 °C | Through Hole | |
 Vishay General Semiconductor - Diodes Division | 39 µF | High Reliability | 19.96 mm | 0.786 " | 0.351 in | 8.92 mm | Axial | 35 V | 120 mOhm | MIL-PRF-39003/9 | Military | Hermetically Sealed | M (1%) | 10 % | -55 °C | 125 °C | Through Hole | D |
Vishay General Semiconductor - Diodes Division | 100 µF | High Reliability | 19.96 mm | 0.786 " | 0.351 in | 8.92 mm | Axial | 20 V | 75 mOhms | MIL-PRF-39003/9 | Military | Hermetically Sealed | B (0.1%) | 10 % | -55 °C | 125 °C | Through Hole | D |
Vishay General Semiconductor - Diodes Division | 100 µF | High Reliability | 19.96 mm | 0.786 " | 0.351 in | 8.92 mm | Axial | 20 V | MIL-PRF-39003/9 | Military | Hermetically Sealed | D | 5 % | -55 °C | 125 °C | Through Hole | D | |
Vishay General Semiconductor - Diodes Division | 100 µF | High Reliability | 19.96 mm | 0.786 " | 0.351 in | 8.92 mm | Axial | 20 V | 75 mOhms | MIL-PRF-39003/9 | Military | Hermetically Sealed | C (0.01%) | 10 % | -55 °C | 125 °C | Through Hole | D |
Vishay General Semiconductor - Diodes Division | 33 ÁF | High Reliability | 19.96 mm | 0.786 " | 0.351 in | 8.92 mm | Axial | 35 V | 130 mOhm | MIL-PRF-39003/9 | Military | Hermetically Sealed | M (1%) | 5 % | -55 °C | 125 °C | Through Hole | D |
Vishay General Semiconductor - Diodes Division | 47 µF | High Reliability | 19.96 mm | 0.786 " | 0.351 in | 8.92 mm | Axial | 35 V | 110 mOhms | MIL-PRF-39003/9 | Military | Hermetically Sealed | P | 10 % | -55 °C | 125 °C | Through Hole | D |
Vishay General Semiconductor - Diodes Division | 68 µF | High Reliability | 17.42 mm | 0.686 in | 0.289 in | 7.34 mm | Axial | 15 V | 95 mOhm | MIL-PRF-39003/9 | Military | Hermetically Sealed | D | 10 % | -55 °C | 125 °C | Through Hole | |
 Vishay General Semiconductor - Diodes Division | 6.8 ÁF | High Reliability | 17.42 mm | 0.686 in | 0.289 in | 7.34 mm | Axial | 50 VDC | 275 mOhm | MIL-PRF-39003/9 | Military | Hermetically Sealed | R (0.01%) | 10 % | -55 °C | 125 °C | Through Hole | |
Vishay General Semiconductor - Diodes Division | 68 µF | High Reliability | 19.96 mm | 0.786 " | 0.351 in | 8.92 mm | Axial | 20 V | 95 mOhm | MIL-PRF-39003/9 | Military | Hermetically Sealed | P | 5 % | -55 °C | 125 °C | Through Hole | D |