PSC2065J Series

650 V, 20 A SiC Schottky diode in D2PAK R2P

Catalog

650 V, 20 A SiC Schottky diode in D2PAK R2P

Part	Mounting Type	Reverse Recovery Time (trr)	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Technology	Voltage - Forward (Vf) (Max) @ If
Nexperia USA Inc. PSC2065JJ	Surface Mount	0 ns	TO-263-3 D2PAK (2 Leads + Tab) Variant	175 ░C	-55 °C	500 mA	180 µA	680 pF	650 V	D2PAK R2P	SiC (Silicon Carbide) Schottky	1.8 V

Catalog

650 V, 20 A SiC Schottky diode in D2PAK R2P

Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.