SIHF18 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 500V 18A TO220-3
| Part | Technology | Package / Case | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | TO-220-3 | 500 V | -55 °C | 150 °C | 18 A | 270 mOhm | 38 W | TO-220-3 | 76 nC | 2942 pF | N-Channel | 10 V | 30 V | Through Hole | 5 V |