NTBL060N065SC1 Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TOLL

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TOLL

Part	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max)	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NTBL060N065SC1	8-PowerSFN	650 V	15 V 18 V	4.3 V	8-HPSOF	170 W	N-Channel	MOSFET (Metal Oxide)	1473 pF	46 A	Surface Mount	74 nC	70 mOhm	-55 °C	175 ░C

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TOLL

Key Features

• Max Junction Temperature 175°C

• Leadless thin SMD package

• Kelvin Source Configuration

• Ultra Low Gate Charge (Qg(tot) = 74 nC)

• Low Effective Output Capacitance (Coss = 113 pF)

• Zero reverse recovery current of body diode

• Typ. RDS(on)= 44 mΩ @ Vgs : 18V

• 650V rated

• 100% Avalanche Tested

• Pb−Free, Halogen Free/BFR Free and RoHS Compliant

• Moisture Sensitivity Level 1 guarantee

• Internal Gate Resistance: 3.9 Ω

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. The TOLL package offers improved thermal performance and excellent switching performance thanks to Kelvin Source configuration and lower parasitic source inductance. TOLL offers Moisture Sensitivity Level 1 (MSL 1).