FCP125N65S3R0 Series

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 24 A, 125 mΩ, TO-220

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 24 A, 125 mΩ, TO-220

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type
ON Semiconductor FCP125N65S3R0	1940 pF	30 V	181 W	46 nC	N-Channel	650 V	4.5 V	125 mOhm	-55 °C	150 °C	TO-220-3	TO-220-3	MOSFET (Metal Oxide)	24 A	10 V	Through Hole

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 24 A, 125 mΩ, TO-220

Key Features

• 700 V @ TJ= 150oC

• Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)

• Ultra Low Gate Charge (Typ. Qg= 46 nC)

• Optimized Capacitance

• 100% Avalanche Tested

• RoHS Compliant

• Typ. RDS(on)= 105 mΩ

• Internal Gate Resistance: 0.5 Ω

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.