1N8032 Series
Manufacturer: GeneSiC Semiconductor
Beta
⌘K
DIODE SIL CARB 650V 2.5A TO257
| Part | Mounting Type | Speed | Voltage - Forward (Vf) (Max) @ If | Capacitance @ Vr, F | Current - Reverse Leakage @ Vr | Technology | Reverse Recovery Time (trr) | Supplier Device Package | Current - Average Rectified (Io) | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GeneSiC Semiconductor | Through Hole | 500 mA | 1.3 V | 274 pF | 5 µA | SiC (Silicon Carbide) Schottky | 0 ns | TO-257 | 2.5 A | -55 °C | 250 °C | TO-257-3 | 650 V |